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 B A X 1 6 — H i g h V o l t a g e G e n e r a l P u r p o s e D i o d e ? 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com BAX16 Rev. 1.0.0 1 April 2008 BAX16 High Voltage General Purpose Diode Absolute Maximum Ratings * Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of the diode may be impaired. Notes: 1) These ratings are based on a maximum junction temperature of 200degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics * Ta = 25°C unless otherwise noted Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 150 V IF(AV) Average Rectified Forward Current 200 mA if Recurrent Peak Forward Current 600 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 ms 1 4 A A TSTG Storage Temperature Range -65 to 200 °C TJ Operating Junction Temperature 175 °C Symbol Parameter Conditions Min. Max. Units VR Breakdown Voltage IR = 100mA 180 V VF Forward Voltage IF = 1.0mA 0.65 V VFP Forward Voltage Pulse Width = 300ms IF = 100mA IF = 200mA 1.3 1.5 IR Reverse Leakage VR = 50V VR = 50V, TA = 150°C VR = 150V VR = 150V, TA = 150°C 25 25 100 100 nA mA nA mA trr Reverse Recovery Time IF = 30mA, IR = 30mA, Irr = 1.0mA, RL = 100W 120 ns DO-35 Glass case COLOR BAND DENOTES CATHODE |